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SPW35N60C3

MOSFET COOL MOS PWR TRANS MAX PWR 650V

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SeekIC No. : 00148022 Detail

SPW35N60C3: MOSFET COOL MOS PWR TRANS MAX PWR 650V

SPW35N60C3 Data Sheet

floor Price/Ceiling Price

US $ 3.32~5.21 / Piece | Get Latest Price
Part Number:
SPW35N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $5.21
  • $4.39
  • $3.86
  • $3.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 34.6 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.1 Ohms
Continuous Drain Current : 34.6 A


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt  rated
• Ultra low effective capacitances
• Improved transconductance




Specifications

Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID

TC=25 °C
34.6
A

TC=100 °C

 21.9

Pulsed drain current1)
ID,pulse

TC=25 °C
103.8
Avalanche energy, single pulse
EAS

ID=17.3 A, VDD=50 V
1500
mJ
Avalanche energy, repetitive t AR1),2)
EAR

ID=34.6 A, VDD=50 V
1.5
Avalanche current, repetitive t AR1)
IAR
  
34.6
A
Drain source voltage slope
dv/dt

ID=34.6 A,
VDS=480 V, T j=125 °C
50
V/ns
Gate source voltage
VGS

static
±20
V

 VGS

AC (f >1 Hz)

  
±30
Power dissipation
Ptot

TC=25 °C
313
W
Operating and storage temperature
Tj , Tstg
  
-55... +150
°C



Parameters:

Technical/Catalog InformationSPW35N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C34.6A
Rds On (Max) @ Id, Vgs100 mOhm @ 21.9A, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max313W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPW35N60C3
SPW35N60C3
SPW35N60C3IN ND
SPW35N60C3INND
SPW35N60C3IN



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