MOSFET N-CH 30V 80A TO-220
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Series: | OptiMOS™ | Manufacturer: | Infineon Technologies | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 80A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 80A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 150nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 7020pF @ 25V | ||
Power - Max: | 300W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | P-TO220-3 |
Parameter | Symbol | Value | Unit |
Continuous drain current 1) TC = 25 °C |
ID | 80 80 |
A |
Pulsed drain current TC = 25 °C |
ID puls | 320 | |
Avalanche energy, single pulse ID =-80A, VDD = 25 V, RGS = 25 |
EAS | 810 | mJ |
Repetitive avalanche energy, limited by Tjmax2) | EAR | 30 | |
Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ±20 | V |
Power dissipation TC = 25 °C |
Ptot | 300 | W |
Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test
Technical/Catalog Information | SPP80N03S2-03 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 7020pF @ 25V |
Power - Max | 300W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 150nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPP80N03S2 03 SPP80N03S203 |