SPP11N60C3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 380 mOhms
Continuous Drain Current : 11 A


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter	Symbol	Value		Unit
		SPP_B	SPA
Continuous drain current TC = 25 °C TC = 100 °C	ID	11 7	111) 71)	A
Pulsed drain current, tp limited by Tjmax	ID puls	33	33	A
Avalanche energy, single pulse ID=5.5A, VDD=50V	EAS	340	340	mJ
Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V	EAR	0.6	0.6
Avalanche current, repetitive tAR limited by Tjmax	IAR	11	11	A
Gate source voltage static	VGS	±20	±20	V
Gate source voltage AC (f >1Hz)	VGS	±30	±30
Power dissipation, TC = 25°C	Ptot	125	33	W
Operating and storage temperature	Tj , Tstg	-55...+150		°C
Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C	dv/dt	50		V/ns

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Parameters:

Technical/Catalog Information	SPP11N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1200pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP11N60C3 SPP11N60C3 SPP11N60C3IN ND SPP11N60C3INND SPP11N60C3IN