SPP100N04S2-04

MOSFET N-CH 40V 100A TO-220

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SPP100N04S2-04: MOSFET N-CH 40V 100A TO-220

floor Price/Ceiling Price

Part Number:
SPP100N04S2-04
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 100A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 172nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 7220pF @ 25V
Power - Max: 300W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 300W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 80A, 10V
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) @ Vgs: 172nC @ 10V
Input Capacitance (Ciss) @ Vds: 7220pF @ 25V


Features:

· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current1)
TC = 25 °C
ID 100
100
A
Pulsed drain current
TC = 25 °C
ID puls 400
Avalanche energy, single pulse
ID =80A, VDD = 25 V, RGS = 25
EAS 810 mJ
Reverse diode dv/dt
IS =100 A, VDS =32 , di/dt = 200 A/s,
Tjmax = 175 °C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 300 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1 Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 210A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos




Parameters:

Technical/Catalog InformationSPP100N04S2-04
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs3.6 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 7220pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs172nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPP100N04S2 04
SPP100N04S204



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