MOSFET COOL MOS N-CH 650V 6.2A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6.2 A | ||
Resistance Drain-Source RDS (on) : | 0.75 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
Technical/Catalog Information | SPP06N60C3 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 6.2A |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 3.9A, 10V |
Input Capacitance (Ciss) @ Vds | 620pF @ 25V |
Power - Max | 74W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Package / Case | TO-220 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPP06N60C3 SPP06N60C3 SPP06N60C3IN ND SPP06N60C3INND SPP06N60C3IN |