SPP04N80C3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 1.3 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

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Parameter	Symbol	Value		Unit
		SPP	SPA
Continuous drain current TC = 25 °C TC = 100 °C	ID	4 2.5	41) 2.51)	A
Pulsed drain current, tp limited by Tjmax	ID puls	12	12	A
Avalanche energy, single pulse ID=0.8A, VDD=50V	EAS	170	170	mJ
Avalanche energy, repetitive tAR limited by Tjmax2) ID=4A, VDD=50V	EAR	0.1	0.1
Avalanche current, repetitive tAR limited by Tjmax	IAR	4	4	A
Gate source voltage	VGS	±20	±20	V
Gate source voltage AC (f >1Hz)	VGS	±30	±30
Power dissipation, TC = 25°C	Ptot	63	38	W
Operating and storage temperature	Tj , Tstg	-55...+150		°C
Drain Source voltage slope VDS = 640 V, ID = 4 A, Tj = 125 °C	dv/dt	50		V/ns

Parameters:

Technical/Catalog Information	SPP04N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 100V
Power - Max	63W
Packaging	Tube
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPP04N80C3 SPP04N80C3 SPP04N80C3IN ND SPP04N80C3INND SPP04N80C3IN