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SPP04N60C2

Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitancesSpecifications Parameter Symbol Value Unit SPP_B SPA Continuous drain currentTC = 25 °CTC = 100 ...

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SPP04N60C2: Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitancesSpecificati...

SPP04N60C2 Data Sheet

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SPP04N60C2
Supply Ability:
5000

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Upload time: 2024/11/14

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Product Details

Description



Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances


Specifications

Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 4.5
2.8		 4.51)
2.81)		 A
Pulsed drain current, tp limited by Tjmax ID puls 9 9 A
Avalanche energy, single pulse
ID=3.6A, VDD=50V		 EAS 130 130 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4.5A, VDD=50V		 EAR 0.4 0.4
Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 4.5 A
Reverse diode dv/dt
IS = 4.5 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C		 dv/dt 6 6 V/ns
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 50 31 W
Operating and storage temperature Tj , Tstg -55...+150 °C



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