Position: Home  > All Categories> Integrated Circuits (ICs) > SPP04N50C3

SPP04N50C3

MOSFET COOL MOS N-CH 500V 4.5A

product image

SPP04N50C3 Picture
See larger image
SeekIC No. : 00148092 Detail

SPP04N50C3: MOSFET COOL MOS N-CH 500V 4.5A

SPP04N50C3 Data Sheet

floor Price/Ceiling Price

US $ .44~.82 / Piece | Get Latest Price
Part Number:
SPP04N50C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.82
  • $.65
  • $.57
  • $.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/14

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.95 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.95 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 4.5
2.8		 4.51)
2.81)		 A
Pulsed drain current, tp limited by Tjmax ID puls 13.5 13.5 A
Avalanche energy, single pulse
ID=3.4A, VDD=50V		 EAS 130 130 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4.5A, VDD=50V		 EAR 0.4 0.4
Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 4.5 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 50 31 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 400 V, ID = 4.5 A, Tj = 125 °C		 dv/dt 50 V/ns



Parameters:

Technical/Catalog InformationSPP04N50C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds 470pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPP04N50C3
SPP04N50C3
SPP04N50C3IN ND
SPP04N50C3INND
SPP04N50C3IN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Integrated Circuits (ICs)
TA8435H
1MB12-140
Cable Assemblies
CS1W-CN114
XW2Z-500T
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Line Protection, Backups
BX0023
A20B-1008-0550
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more