SPI80N06S2L-11

MOSFET N-CH 55V 80A I2PAK

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SeekIC No. : 003433041 Detail

SPI80N06S2L-11: MOSFET N-CH 55V 80A I2PAK

floor Price/Ceiling Price

Part Number:
SPI80N06S2L-11
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/8

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 80A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 93µA Gate Charge (Qg) @ Vgs: 80nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2650pF @ 25V
Power - Max: 158W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: P-TO262-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 55V
Power - Max: 158W
Current - Continuous Drain (Id) @ 25° C: 80A
Input Capacitance (Ciss) @ Vds: 2650pF @ 25V
Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: P-TO262-3


Parameters:

Technical/Catalog InformationSPI80N06S2L-11
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs11 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 2650pF @ 25V
Power - Max158W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPI80N06S2L 11
SPI80N06S2L11



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