MOSFET N-CH 55V 80A I2PAK
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Features: · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt rated...
Series: | OptiMOS™ | Manufacturer: | Infineon Technologies | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 80A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 40A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2V @ 93µA | Gate Charge (Qg) @ Vgs: | 80nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2650pF @ 25V | ||
Power - Max: | 158W | Mounting Type: | Through Hole | ||
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Supplier Device Package: | P-TO262-3 |
Technical/Catalog Information | SPI80N06S2L-11 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 40A, 10V |
Input Capacitance (Ciss) @ Vds | 2650pF @ 25V |
Power - Max | 158W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | SPI80N06S2L 11 SPI80N06S2L11 |