MOSFET N-CH 100 V 21 A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 21 A | ||
Resistance Drain-Source RDS (on) : | 80 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Continuous drain current TC = 25 °C TC = 100 °C |
ID | 21 15.0 |
A |
Pulsed drain current TC = 25 °C |
ID puls | 84 | |
Avalanche energy, single pulse ID =21 A, VDD = 25 V, RGS = 25 |
EAS | 130 | mJ |
Reverse diode dv/dt IS =21 A, VDS = 80 V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ±20 | V |
Power dissipation TC = 25 °C |
Ptot | 90 | W |
Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Technical/Catalog Information | SPI21N10 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 21A |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 865pF @ 25V |
Power - Max | 90W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 38.4nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPI21N10 SPI21N10 SPI21N10IN ND SPI21N10INND SPI21N10IN |