SPI10N10L

MOSFET N-KANAL POWER MOS

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SeekIC No. : 00162189 Detail

SPI10N10L: MOSFET N-KANAL POWER MOS

floor Price/Ceiling Price

Part Number:
SPI10N10L
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10.3 A
Resistance Drain-Source RDS (on) : 0.154 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-262
Continuous Drain Current : 10.3 A
Resistance Drain-Source RDS (on) : 0.154 Ohms


Parameters:

Technical/Catalog InformationSPI10N10L
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10.3A
Rds On (Max) @ Id, Vgs154 mOhm @ 8.1A, 10V
Input Capacitance (Ciss) @ Vds 444pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPI10N10L
SPI10N10L



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