MOSFET COOL MOS N-CH 730V 7.3A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 7.3 A | ||
Resistance Drain-Source RDS (on) : | 0.6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-262 | Packaging : | Tube |
Parameter | Symbol | Value | Unit | |
SPP_I | SPA | |||
Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
7.31) 4.61) |
A |
Pulsed drain current, tp limited by Tjmax | ID puls | 21.9 | 21.9 | A |
Avalanche energy, single pulse ID=1.5A, VDD=50V |
EAS | 230 | 230 | mJ |
Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD=50V |
EAR | 0.5 | 0.5 | |
Avalanche current, repetitive tAR limited by Tjmax | IAR | 2.5 | 2.5 | A |
Gate source voltage | VGS | ±20 | ±20 | V |
Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
Power dissipation, TC = 25°C | Ptot | 83 | 32 | W |
Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C |
dv/dt | 50 | V/ns |
Technical/Catalog Information | SPI07N65C3 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 7.3A |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
Power - Max | 83W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 27nC @ 10V |
Package / Case | I²Pak, TO-262 (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPI07N65C3 SPI07N65C3 SPI07N65C3IN ND SPI07N65C3INND SPI07N65C3IN |