Features: · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain current1)TC = 25 °C ID 5048 A Pulsed drain currentTC = 25 °C ID puls 200 Avalanche energy, single pulseID =50A, VDD = ...
SPD50N06S2-14: Features: · N-Channel· Enhancement mode· 175°C operating temperature· Avalanche rated· dv/dt ratedSpecifications Parameter Symbol Value Unit Continuous drain current1)TC = 25 °C ID 5048...
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Parameter | Symbol | Value | Unit |
Continuous drain current1) TC = 25 °C |
ID | 50 48 |
A |
Pulsed drain current TC = 25 °C |
ID puls | 200 | |
Avalanche energy, single pulse ID =50A, VDD = 25 V, RGS = 25 |
EAS | 240 | mJ |
Repetitive avalanche energy, limited by Tjmax 2) | EAR | 13.6 | |
Reverse diode dv/dt IS =50 A, VDS =44V, di/dt = 200 A/s,Tjmax=175°C |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ±20 | V |
Power dissipation TC = 25 °C |
Ptot | 136 | W |
Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
1 Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 67A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test