MOSFET N-CH 30V 30A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 6.7 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
Parameter | Symbol | Value | Unit |
Continuous drain current 1) TC = 25 °C |
ID | 30 30 |
A |
Pulsed drain current TC = 25 °C |
ID puls | 120 | |
Avalanche energy, single pulse ID =30A, VDD = 25 V, RGS = 25 |
EAS | 250 | mJ |
Repetitive avalanche energy, limited by Tjmax 2) | EAR | 13 | |
Reverse diode dv/dt IS =30 A, VDS =24V, di/dt = 200 A/s,Tjmax=175°C |
dv/dt | 6 | kV/s |
Gate source voltage | VGS | ±20 | V |
Power dissipation TC = 25 °C |
Ptot | 136 | W |
Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |
Technical/Catalog Information | SPD30N03S2L-07 |
Vendor | Infineon Technologies (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 30A |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 30A, 10V |
Input Capacitance (Ciss) @ Vds | 2530pF @ 25V |
Power - Max | 136W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 68nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | SPD30N03S2L 07 SPD30N03S2L07 SPD30N03S2L07INCT ND SPD30N03S2L07INCTND SPD30N03S2L07INCT |