SPD30N03S2L-07

MOSFET N-CH 30V 30A

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SeekIC No. : 00160980 Detail

SPD30N03S2L-07: MOSFET N-CH 30V 30A

floor Price/Ceiling Price

Part Number:
SPD30N03S2L-07
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 6.7 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 6.7 m Ohms


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Excellent Gate Charge x RDS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current 1)
TC = 25 °C
ID 30
30
A
Pulsed drain current
TC = 25 °C
ID puls 120
Avalanche energy, single pulse
ID =30A, VDD = 25 V, RGS = 25
EAS 250 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR 13
Reverse diode dv/dt
IS =30 A, VDS =24V, di/dt = 200 A/s,Tjmax=175°C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 136 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1 Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 111A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test.



Parameters:

Technical/Catalog InformationSPD30N03S2L-07
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs6.7 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 2530pF @ 25V
Power - Max136W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs68nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPD30N03S2L 07
SPD30N03S2L07
SPD30N03S2L07INCT ND
SPD30N03S2L07INCTND
SPD30N03S2L07INCT



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