SPD07N60C3T

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 7.3A
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Power - Max: 83W
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 650V
Input Capacitance (Ciss) @ Vds: 790pF @ 25V
Series: CoolMOS™
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO252-3
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA


Parameters:

Technical/Catalog Information	SPD07N60C3T
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	7.3A
Rds On (Max) @ Id, Vgs	600 mOhm @ 4.6A, 10V
Input Capacitance (Ciss) @ Vds	790pF @ 25V
Power - Max	83W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD07N60C3T SPD07N60C3T SPD07N60C3XTINDKR ND SPD07N60C3XTINDKRND SPD07N60C3XTINDKR