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SPD06N80C3

MOSFET COOL MOS POWER TRANSISTOR

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SeekIC No. : 00146559 Detail

SPD06N80C3: MOSFET COOL MOS POWER TRANSISTOR

SPD06N80C3 Data Sheet

floor Price/Ceiling Price

US $ 1.04~1.5 / Piece | Get Latest Price
Part Number:
SPD06N80C3
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 10~100
  • 100~500
  • Unit Price
  • $1.5
  • $1.36
  • $1.11
  • $1.04
  • Processing time
  • 15 Days
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  • 15 Days
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Upload time: 2024/12/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.9 Ohms


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated




Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 6
3.8		 A
Pulsed drain current, tp limited by Tjmax ID puls 18
Avalanche energy, single pulse
ID=1.2A, VDD=50V		 EAS 230 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=6A, VDD=50V		 EAR 0.2
Avalanche current, repetitive tAR limited by Tjmax IAR 6 A
Gate source voltage VGS ±20 V
Power dissipation, TC = 25°C Ptot 83 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 640 V, ID =6 A, Tj = 125 °C		 dv/dt 50 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPD06N80C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs900 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds 785pF @ 100V
Power - Max83W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs41nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPD06N80C3
SPD06N80C3
SPD06N80C3INTR ND
SPD06N80C3INTRND
SPD06N80C3INTR



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