MOSFET COOL MOS N-CH 650V 6.2A
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Features: · New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche r...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 650 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6.2 A | ||
Resistance Drain-Source RDS (on) : | 0.75 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | SPD06N60C3 |
Vendor | Infineon Technologies (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 6.2A |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 3.9A, 10V |
Input Capacitance (Ciss) @ Vds | 620pF @ 25V |
Power - Max | 74W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPD06N60C3 SPD06N60C3 SPD06N60C3INDKR ND SPD06N60C3INDKRND SPD06N60C3INDKR |