MOSFET COOL MOS N-CH 800V 2A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche r...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2 A | ||
Resistance Drain-Source RDS (on) : | 2.7 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Technical/Catalog Information | SPD02N80C3 |
Vendor | Infineon Technologies (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 2.7 Ohm @ 1.2A, 10V |
Input Capacitance (Ciss) @ Vds | 290pF @ 100V |
Power - Max | 42W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 16nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPD02N80C3 SPD02N80C3 SPD02N80C3INDKR ND SPD02N80C3INDKRND SPD02N80C3INDKR |