Position: Home  > All Categories> Integrated Circuits (ICs) > SPD02N60C3

SPD02N60C3

MOSFET COOL MOS PWR TRANS 650V 1.8A

product image

SPD02N60C3 Picture
See larger image
SeekIC No. : 00156621 Detail

SPD02N60C3: MOSFET COOL MOS PWR TRANS 650V 1.8A

SPD02N60C3 Data Sheet

floor Price/Ceiling Price

US $ .23~.29 / Piece | Get Latest Price
Part Number:
SPD02N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1550
  • 1550~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.29
  • $.24
  • $.24
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/14

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-252
Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 1.8
1.1		 A
Pulsed drain current, tp limited by Tjmax ID puls 5.4
Avalanche energy, single pulse
ID=1.35A, VDD=50V		 EAS 50 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=1.8A, VDD=50V		 EAR 0.07
Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 25 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C		 dv/dt 50 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPD02N60C3
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C1.8A
Rds On (Max) @ Id, Vgs3 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds 200pF @ 25V
Power - Max25W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs12.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPD02N60C3
SPD02N60C3
SPD02N60C3INCT ND
SPD02N60C3INCTND
SPD02N60C3INCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more