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SPD02N60C3

MOSFET COOL MOS PWR TRANS 650V 1.8A

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SeekIC No. : 00156621 Detail

SPD02N60C3: MOSFET COOL MOS PWR TRANS 650V 1.8A

SPD02N60C3 Data Sheet

floor Price/Ceiling Price

US $ .23~.29 / Piece | Get Latest Price
Part Number:
SPD02N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 2000~2500
  • 2500~5000
  • Unit Price
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-252
Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 1.8
1.1		 A
Pulsed drain current, tp limited by Tjmax ID puls 5.4
Avalanche energy, single pulse
ID=1.35A, VDD=50V		 EAS 50 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=1.8A, VDD=50V		 EAR 0.07
Avalanche current, repetitive tAR limited by Tjmax IAR 1.8 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 25 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C		 dv/dt 50 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPD02N60C3
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C1.8A
Rds On (Max) @ Id, Vgs3 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds 200pF @ 25V
Power - Max25W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs12.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPD02N60C3
SPD02N60C3
SPD02N60C3INCT ND
SPD02N60C3INCTND
SPD02N60C3INCT



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