SPB80N03S2L05T

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 167W
Current - Continuous Drain (Id) @ 25° C: 80A
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: P-TO263-3
Input Capacitance (Ciss) @ Vds: 3320pF @ 25V
Vgs(th) (Max) @ Id: 2V @ 110µA
Gate Charge (Qg) @ Vgs: 89.7nC @ 10V
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 55A, 10V


Parameters:

Technical/Catalog Information	SPB80N03S2L05T
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	4.9 mOhm @ 55A, 10V
Input Capacitance (Ciss) @ Vds	3320pF @ 25V
Power - Max	167W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	89.7nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPB80N03S2L05T SPB80N03S2L05T