SPB30N03

The SPB30N03 is one member of the SPB30 family which is designed as the SIPMOS Power transistor that has some points of features such as:(1)N channel; (2)enhancement mode; (3)avalanche rated; (4)dv / dt rated; (5)175 operating temperature.

The absolute maximum ratings of the SPB30N03 can be summarized as:(1)Continuous drain current TC = 25 °C: 30 A;(2)Continuous drain current TC = 100 °C: 30 A;(3)Pulsed drain current, TC = 25 °C: 120 A;(4)Avalanche energy, single pulse ID= 30 A, VDD= 25 V: 145 mJ;(5)Avalanche energy, periodic limited by Tjmax: 7.5 mJ;(6)Avalanche current, repetitive tAR limited by Tjmax: 11 A;(7)Reverse diode dv/dt: 6 V/ns;(8)Gate source voltage static: ±20 V;(9)Gate source voltage dynamic: ±30 V;(10)Power dissipation, TC = 25°C: 75 W;(11)Operating and storage temperature: -55 to +175 °C. If you want to know more information such as the electrical characteristics about the SPB30N03, please download the datasheet in www.seekic.com or www.chinaicmart.com.