SPB21N10T

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 21A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 90W
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-TO263-3
Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 865pF @ 25V
Gate Charge (Qg) @ Vgs: 38.4nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 44µA


Parameters:

Technical/Catalog Information	SPB21N10T
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	21A
Rds On (Max) @ Id, Vgs	80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	865pF @ 25V
Power - Max	90W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38.4nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPB21N10T SPB21N10T