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SPB17N80C3

MOSFET COOL MOS PWR TRANS 800V

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SeekIC No. : 00147773 Detail

SPB17N80C3: MOSFET COOL MOS PWR TRANS 800V

SPB17N80C3 Data Sheet

floor Price/Ceiling Price

US $ 2.03~3.27 / Piece | Get Latest Price
Part Number:
SPB17N80C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $3.27
  • $2.63
  • $2.39
  • $2.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.29 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Package / Case : TO-263
Continuous Drain Current : 17 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.29 Ohms


Features:

• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 17
11		 171)
111)		 A
Pulsed drain current, tp limited by Tjmax ID puls 51 51 A
Avalanche energy, single pulse
ID=3.4A, VDD=50V		 EAS 670 670 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=17A, VDD=50V		 EAR 0.5 0.5
Avalanche current, repetitive tAR limited by Tjmax IAR 17 17 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30  
Power dissipation, TC = 25°C Ptot 208 42 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 640 V, ID = 17 A, Tj = 125 °C		 dv/dt 50 V/ns



Parameters:

Technical/Catalog InformationSPB17N80C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs290 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 100V
Power - Max227W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs177nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB17N80C3
SPB17N80C3
SPB17N80C3INTR ND
SPB17N80C3INTRND
SPB17N80C3INTR



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