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SPB12N50C3

MOSFET COOL MOS N-CH 560V 11.6A

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SeekIC No. : 00147368 Detail

SPB12N50C3: MOSFET COOL MOS N-CH 560V 11.6A

SPB12N50C3 Data Sheet

floor Price/Ceiling Price

US $ .98~1.62 / Piece | Get Latest Price
Part Number:
SPB12N50C3
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 100~250
  • Unit Price
  • $1.62
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  • $1.17
  • $.98
  • Processing time
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Upload time: 2024/12/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11.6 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 0.38 Ohms
Continuous Drain Current : 11.6 A


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP_B_I SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 11.6
7		 11.61)
71)		 A
Pulsed drain current, tp limited by Tjmax ID puls 34.8 34.8 A
Avalanche energy, single pulse
ID=2.5A, VDD=50V		 EAS 340 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V		 EAR 0.6 0.6
Avalanche current, repetitive tAR limited by Tjmax IAR 11.6 11.6 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 125 33 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C		 dv/dt 50 V/ns

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.


Parameters:

Technical/Catalog InformationSPB12N50C3
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)560V
Current - Continuous Drain (Id) @ 25° C11.6A
Rds On (Max) @ Id, Vgs380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 25V
Power - Max125W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs49nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPB12N50C3
SPB12N50C3
SPB12N50C3INDKR ND
SPB12N50C3INDKRND
SPB12N50C3INDKR



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