SPB11N60S5, US $ .86-2.39 , Infineon Technologies, SPB11N60S5 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151436 Detail

SPB11N60S5: MOSFET COOL MOS N-CH 600V 11A

SPB11N60S5 Data Sheet

US $ .86~2.39 / Piece | Get Latest Price

Part Number:: SPB11N60S5
Mfg:: Infineon Technologies
Supply Ability:: 5000

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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	11 A
Resistance Drain-Source RDS (on) :	0.38 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-263
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.38 Ohms

Parameters:

Technical/Catalog Information	SPB11N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	380 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds	1460pF @ 25V
Power - Max	125W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPB11N60S5 SPB11N60S5 SPB11N60S5INTR ND SPB11N60S5INTRND SPB11N60S5INTR

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SPB11N60S5

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