MOSFET COOL MOS N-CH 600V 20.7A
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Thermal Interface Products SIL PAD A2000 .015" 1.00x.75x.30x.14
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 20.7 A | ||
Resistance Drain-Source RDS (on) : | 190 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220FP | Packaging : | Tube |
Parameter | Symbol | Value | Unit | |
SPP_B_I | SPA | |||
Continuous drain current TC = 25 °C TC = 100 °C |
ID | 20.7 13.1 |
20.71) 13.11) |
A |
Pulsed drain current, tp limited by Tjmax | ID puls | 62.1 | 62.1 | A |
Avalanche energy, single pulse ID=10A, VDD=50V |
EAS | 690 | 690 | mJ |
Avalanche energy, repetitive tAR limited by Tjmax2) ID=20A, VDD=50V |
EAR | 1 | 1 | |
Avalanche current, repetitive tAR limited by Tjmax | IAR | 20 | 20 | A |
Gate source voltage static | VGS | ±20 | ±20 | V |
Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
Power dissipation, TC = 25°C | Ptot | 208 | 34.5 | W |
Operating and storage temperature | Tj , Tstg | -55...+150 | °C | |
Drain Source voltage slope VDS = 480 V, ID = 20.7 A, Tj = 125 °C |
dv/dt | 50 | V/ns |
Technical/Catalog Information | SPA20N60C3 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25° C | 20.7A |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 13.1A, 10V |
Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
Power - Max | 34.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 114nC @ 10V |
Package / Case | TO-220FP |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPA20N60C3 SPA20N60C3 SPA20N60C3IN ND SPA20N60C3INND SPA20N60C3IN |