Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220FP
Drain-Source Breakdown Voltage
: 600 V
Continuous Drain Current
: 11 A
Resistance Drain-Source RDS (on)
: 0.38 Ohms
Features: • New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)Pinout
Specifications
| Parameter |
Symbol |
Value |
Unit |
| SPP_B |
SPA |
Continuous drain current
TC = 25 °C
TC = 100 °C |
ID |
11
7 |
111)
71) |
A |
| Pulsed drain current, tp limited by Tjmax |
ID puls |
33 |
33 |
A |
Avalanche energy, single pulse
ID=5.5A, VDD=50V |
EAS |
340 |
340 |
mJ |
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V |
EAR |
0.6 |
0.6 |
| Avalanche current, repetitive tAR limited by Tjmax |
IAR |
11 |
11 |
A |
| Gate source voltage static |
VGS |
±20 |
±20 |
V |
| Gate source voltage AC (f >1Hz) |
VGS |
±30 |
±30 |
|
| Power dissipation, TC = 25°C |
Ptot |
125 |
33 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55...+150 |
°C |
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C |
dv/dt |
50 |
V/ns |
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DescriptionThe SPA11N60C3 is designed as one kind of cool MOS power transistor device that has some points of features:(1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
The absolute maximum ratings of the SPA11N60C3 can be summarized as:(1)Continuous drain current Tc = 25 °C: 11.0 A;(2)Continuous drain current Tc = 100 °C: 7.0 A;(3)Pulsed drain current, tp limited by Tjmax: 33 A;(4)Avalanche energy, single pulse: 340 mJ;(5)Avalanche energy, repetitive tAR limited by Tjmax: 0.6 mJ;(6)Avalanche current, repetitive tAR limited by Tjmax: 11 A;(7)Gate source voltage static: ±20 V;(8)Gate source voltage AC (f >1Hz): ±30 V;(9)Power dissipation, TC = 25°C: 125 or 33 W;(10)Operating and storage temperature: -55 to +150 °C.
The electrical characteristics of this SPA11N60C3 can be summarized as:(1)Drain-source breakdown voltage: 600 V;(2)Drain-Source avalanche breakdown voltage: 700 V;(3)Gate threshold voltage: 2.1 to 3.9 V;(4)Gate-source leakage current: 100 nA;(5)Gate input resistance: 0.86;(6)Transconductance: 8.3 s;(7)Input capacitance: 1200 pF;(8)Output capacitance: 390 pF;(9)Reverse transfer capacitance: 30 pF. If you want to know more information such as the electrical characteristics about the SPA20N60C3, please download the datasheet in www.seekic.com or www.chinaicmart.com.
Parameters: | Technical/Catalog Information | SPA11N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 11A |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 33W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 60nC @ 10V |
| Package / Case | TO-220FP |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPA11N60C3
SPA11N60C3
SPA11N60C3IN ND
SPA11N60C3INND
SPA11N60C3IN
|
SPA11N60C3 Data Sheet
