Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitancesSpecifications Parameter Symbol Value Unit SPP_B SPA Continuous drain currentTC = 25 °CTC = 100 ...
SPA11N60C2: Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitancesSpecificati...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Value | Unit | |
SPP_B | SPA | |||
Continuous drain current TC = 25 °C TC = 100 °C |
ID | 11 7 |
111) 71) |
A |
Pulsed drain current, tp limited by Tjmax | ID puls | 22 | 22 | A |
Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 340 | 340 | mJ |
Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V |
EAR | 0.6 | 0.6 | |
Avalanche current, repetitive tAR limited by Tjmax | IAR | 11 | 11 | A |
Reverse diode dv/dt IS = 11 A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | 6 | V/ns |
Gate source voltage | VGS | ±20 | ±20 | V |
Gate source voltage AC (f >1Hz) | VGS | ±30 | ±30 | |
Power dissipation, TC = 25°C | Ptot | 125 | 33 | W |
Operating and storage temperature | Tj , Tstg | -55...+150 | °C |