MOSFET COOL MOS N-CH 560V 7.6A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 560 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 7.6 A | ||
Resistance Drain-Source RDS (on) : | 0.6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220FP | Packaging : | Tube |
Technical/Catalog Information | SPA08N50C3 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 560V |
Current - Continuous Drain (Id) @ 25° C | 7.6A |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
Input Capacitance (Ciss) @ Vds | 750pF @ 25V |
Power - Max | 32W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 32nC @ 10V |
Package / Case | TO-220FP |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SPA08N50C3 SPA08N50C3 SPA08N50C3IN ND SPA08N50C3INND SPA08N50C3IN |