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Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 110Watts 1.40/W 200 -65 to150 6.5 A 70V 70V 20...

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SeekIC No. : 004500618 Detail

SP702: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

SP702 Data Sheet

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Part Number:: SP702
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/10/31

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Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJuncti...

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Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
110Watts	1.40/W	200	-65 to150	6.5 A	70V	70V	20V

Description

Silicon VDMOS and LDMOS transistors SP702 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"^TM process features low feedback and output capacitances resulting in high F_t transistors with high input impedance and high efficiency.

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SP702

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