Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 30 Watts 7.00 /W 200 -65 to 150 1.8A 70V 70V 20VDescriptionSilicon VDMOS and...
SP202: Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSo...
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Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
30 Watts | 7.00 /W | 200 | -65 to 150 | 1.8A | 70V | 70V | 20V |
Silicon VDMOS and LDMOStransistors SP202 designed specifically for broadband RF applications.Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others.
"Polyfet"TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.