Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 20 Watts 10.00 /W 200 -65 to 150 1.2A 70V 70V 20VDescriptionSilicon VDMOS an...
SP201: Specifications TotalDeviceDissipation Junction to Case ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSo...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
20 Watts | 10.00 /W | 200 | -65 to 150 | 1.2A | 70V | 70V | 20V |
Silicon VDMOS and LDMOS transistors SP201 designed specifically for broadband RF applications.Suitable for Militry Radios,Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,Laser Driver and others."Polyfet"TM process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency