Transistors Bipolar (BJT) NPN General Purpose
SO2222AW: Transistors Bipolar (BJT) NPN General Purpose
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 100 | Configuration : | Single |
Maximum Operating Frequency : | 270 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-323-3 |
Packaging : | Reel |
· SILICON EPITAXIAL PLANAR NPN TRANSISTOR
· MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS
· TAPE & REEL PACKING
· THE PNP COMPLEMENTARY TYPE IS SO2907AW
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage (IE = 0) |
75 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
40 |
V |
VEBO |
Emitter-Base Voltage(IC = 0) |
6 |
V |
IC |
Collector Current |
0.6 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
0.8 |
A |
Ptot |
Total Dissipation at Tamb = 25 |
200 |
mW |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |