SN755866PZP-P

The SN755866PZP-P is one member of the SN755866 family which designed as the monolithic BIDFET integrated circuit that designed to perform the line-select operation of a matrix-addressable display. The device inputs are diode-clamped CMOS inputs. The outputs of these drivers are normally low and can be selectively switched high when the strobe input is low.

Features of the SN755866PZP-P are:(1)controls 32 electrodes;(2)100-V totem-pole outputs;(3)low standby power consumption;(4)all inputs contain sink and source clamp diodes;(5)15-mA steady-state output current;(6)rugged DMOS outputs;(7)CMOS inputs;(8)direct replacement.

The absolute maximum ratings of the SN755866PZP-P can be summarized as:(1)sepply voltage Vcc1:13.8V or 15 V;(2)supply voltage Vcc2:100 V;(3)input voltage:Vcc1+0.3 V;(4)continuous total power dissipation:see dissipation rating table;(5)storage temperature range:-65 to +150;(6)lead temperature 1,6 mm (1/16 inch) from case for 60 seconds:J package:300;(7)lead temperature 1,6 mm (1/16 inch) from case for 10 seconds:N package:260;(8)case temperature for 60 seconds:FD or FJ package:260;(9)case temperature for 10 seconds:FN package:260. If you want to know more information such as the electrical characteristics about the SN755866PZP-P, please download the datasheet in www.seekic.com or www.chinaicmart.com .