Specifications VDSS Drain Source Voltage 800 V ID Continuous Drain Current 12 A IDM Pulsed Drain Current 1 48 A VGS Gate Source Voltage ±30 V VGSM Gate Source Voltage Transient ±40 PD otal Power Dissipation @ Tcase = 2...
SML80B12: Specifications VDSS Drain Source Voltage 800 V ID Continuous Drain Current 12 A IDM Pulsed Drain Current 1 48 A VGS Gate Source Voltage ±30 ...
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Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
Features: High Voltage (800V)High Current (25A)Ultra Fast (45nS)Common CathodeTO254 Hermetic Packa...
VDSS |
Drain Source Voltage |
800 |
V |
ID |
Continuous Drain Current |
12 |
A |
IDM |
Pulsed Drain Current 1 |
48 |
A |
VGS |
Gate Source Voltage |
±30 |
V |
VGSM |
Gate Source Voltage Transient |
±40 | |
PD |
otal Power Dissipation @ Tcase = 25°C |
260 |
W |
Derate Linearly |
2.08 |
W/°C | |
TJ , TSTG |
Operating and Storage Junction Temperature Range |
55 to 150 |
°C |
TL |
Lead Temperature : 0.063" from Case for 10 Sec. |
300 | |
IAR |
Avalanche Current1 (Repetitive and Non-Repetitive) |
12 |
A |
EAR |
Repetitive Avalanche Energy 1 |
30 |
mJ |
EAS |
Single Pulse Avalanche Energy 2 |
960 |