Features: • Faster Switching• Lower Leakage• TO3 Hermetic PackageSpecifications VDSS Drain Source Voltage 400 V ID Continuous Drain Current 28 A IDM Pulsed Drain Current 1 112 A VGS Gate Source...
SML30A33: Features: • Faster Switching• Lower Leakage• TO3 Hermetic PackageSpecifications VDSS Drain Source Voltage 400 V ID Continuous Drain Current ...
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VDSS |
Drain Source Voltage |
400 |
V |
ID |
Continuous Drain Current |
28 |
A |
IDM |
Pulsed Drain Current 1 |
112 |
A |
VGS |
Gate Source Voltage |
±20 |
V |
VGSM |
Gate Source Voltage Transient |
±30 |
V |
PD |
Total Power Dissipation @ Tcase = 25°C |
300 |
W |
PD |
Derate Linearly |
2.4 |
W/°C |
TJ , TSTG |
Operating and Storage Junction Temperature Range |
55 to 150 |
°C |
TL |
Lead Temperature : 0.063" from Case for 10 Sec. |
300 |
°C |
IAR |
Avalanche Current1 (Repetitive and Non-Repetitive) |
28 |
A |
EAR |
Repetitive Avalanche Energy 1 |
30 |
mJ |
EAS |
Single Pulse Avalanche Energy 2 |
1300 |
mJ |
StarMOS SML30A33 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML30A33 also achieves faster switching speeds through optimised gate layout.