SMJ28F010B

Features:

`Organization . . . 131072 * 8-Bit Flash Memory
`Pin Compatible With Existing 1M-bit EPROMs
`High-Reliability MIL-PRF-38535 Processing
`VCC Tolerance ±10%
`All Inputs/Outputs TTL Compatible
`Maximum Access/Minimum Cycle Time
28F010B-12 120 ns
'28F010B-15 150 ns
'28F010B-20 200 ns
`Industry-Standard Programming Algorithm
`10000 Program/Erase-Cycle
`Latchup Immunity of 250 mA on All Input and Output Lines
`Low Power Dissipation (VCC = 5.5 V)
Active Write . . . 55 mW
Active Read . . . 165 mW
Electrical Erase . . . 82.5 mW
Standby . . . 0.55 mW (CMOS-Input Levels)
`Military Temperature Range
55°C to 125°C




Pinout






Specifications

Supply voltage range, V_CC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 V to 7 V
Supply voltage range, V_PP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.6 V to 14 V
Input voltage range (see Note 2): All inputs except A9 . . . . . . . . . . . . . . . . . . 0.6 V to 7 V
A9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.6 V to 13.5 V
Output voltage range (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.6 V to 7 V
Output short-circuit current (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200 mA
Operating free-air temperature range during read/erase/program, T_A . . 55° C to 125°C
Storage temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65°C to 150°C
Maximum power dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .1 W
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..300°C
Junction temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150°C
† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and unctional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not mplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to VSS.
2. The voltage on any input pin can undershoot to 2 V for periods less than 20 ns.
3. The voltage on any output pin can overshoot to 7 V for periods less than 20 ns.
4. No more than one output can be shorted at a time, and the duration cannot exceed one second.

Description

The SMJ28F010B is a 1048576-bit, programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 10000 program/erase-endurance-cycle version.

The SMJ28F010B flash memory is offered in a 32-lead ceramic 600-mil side-braze dual in-line package (DIP) (JDD suffix) and a leadless ceramic chip carrier (FE suffix).