SMF-06020

The SMF-06020 is a packaged version of the SMF06000.The chip is a 600 m n-channel MESFET with 0.5 m gate length,utilizing samsung microwave's power optimized P5 process.The SMF-06020 active layer is formed by ion implantation.

Features of the SMF-06020 are:(1)+24.5dBm output power with 7.5 dB associated gain at 8 GHz;(2)power optimized design provides high power-added efficiency;(3)large cross section Ti/Pt/Au gates enhance durability and reliability;(4)chip devices are selected from slandard military grade wafers;(5)hermetic metal/ceramic package suitable for hi-rel applications;(6)custom electrical test and screening available for source control drawings.

The product ratings of the SMF-06020 can be summarized as:(1):the symbol is VDS,the parameter is drain to source voltage,the maximum operating condition recommended is +10.0,the maximum operating condition absolute is +14.0,the unit is V;(2):the symbol is VGS,the parameter is gate to source voltage,the maximum operating condition recommended is -6.0,the maximum operating condition absolute is -8.0,the unit is V;(3):the symbol is TCH,the parameter is channel temperature operating,the maximum operating condition recommended is +180,the maximum operating condition absolute is +250,the unit is ;(4):the symbol is Tstg,the parameter is storage temperature,the maximum operating condition recommended is -65 to +180,the maximum operating condition absolute is -65 to +250,the unit is .