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SM705

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 230 Watts 0.75/W 200 -65to150 13.5 A 70 V 70 V 20VDescriptionSilicon VDMOS and ...

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SeekIC No. : 004493997 Detail

SM705: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

SM705 Data Sheet

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Part Number:
SM705
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
230 Watts 0.75/W
 200 -65to150 13.5 A 70 V 70 V 20V





Description

Silicon VDMOS and LDMOS transistors SM705 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others."Polyfet"™ process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.






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