Features: • Patented, Reliable GaAs HBT Technology• Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz• High Associated Gain: 22dB Typ. at 2.0 GHz• True 50 Ohm MMIC : No External Matching Required• Low Current Draw : Only 8mA• Low Cost Surface Mount Plastic PackageAppl...
SLN-186: Features: • Patented, Reliable GaAs HBT Technology• Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz• High Associated Gain: 22dB Typ. at 2.0 GHz• True 50 Ohm MMIC : No External Ma...
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Stanford Microdevices' SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz.
The SLN-186 needs only 2 DC-blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0dB noise figure.
This 50 Ohm LNA requires only a single supply voltage and draws only 8mA. For broadband applications, it may be biased at 6mA with minimal effect on noise figure and gain. The SLN-186 is available in tape and reel at 1000, 3000 and 5000 devices per reel.