SKW30N60HS

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 30% lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Complete product spectrum and PSpice Models : http://www.infineon.com


Specifications

Parameter	Symbol	Value	Unit
Collector-emitter voltage	VCE	600	V
DC collector current TC = 25°C TC = 100°C	IC	41 30	A
Pulsed collector current, tp limited by Tjmax	ICpuls	112
Turn off safe operating area VCE 1200V, Tj 150°C	-	112
Diode forward current TC = 25°C TC = 100°C	IF	41 28
Diode pulsed current, tp limited by Tjmax	IFpuls	112
Gate-emitter voltage	VGE	±20 ±30	V
Short circuit withstand time1) VGE = 15V, 100V VCC 1200V, Tj 150°C	tSC	10	S
Power dissipation TC = 25°C	Ptot	250	W
Operating junction and storage temperature	Tj , Tstg	-55to+150	°C

Description

The information herein of SKW30N60HS is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.