SKM75GB124D

The SKM75GB124D is designed as one kind of low loss IGBT module, SKM75GB124D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si structure (NPT-non punch-through IGBT);(3)high short circuit capability, self limiting to 6 x Icnom;(4)without hard mould;(5)fast and soft inverse CAL diodes;(6)isolated copper baseplate using DBC direct copper bonding technology;(7)large clearance (12 mm) and creepage distances (20 mm).

Also SKM75GB124D can be used in wide range of applications such as (1)switch mode power supplies;(2)inverters;(3)DC choppers;(4)AC motor speed control;(5)switching (not for lineat use);(6)UPS;(7)general power switching applications. The absolute maximum ratings of the SKM75GB124D can be summarized as:(1)V CES: 1200 V;(2)Ic: 100 (75) A;(3)I CRM: 100 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 2500 V;(7)I F: 75 (50) A;(8)I FRM: 100 A;(9)I FSM: 550.

The electrical characteristics of SKM75GB124D can be summarized as:(1)VGE(th): 4.5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.1 to 1.25 V;(4)rCE: 2.0 to 2.4 m;(5)VCE(sat): 2.1 to 2.45 V;(6)Cies: 3.3 to 4.3 nF;(7)Coes: 0.5 to 0.6 nF;(8)Cres: 0.22 to 0.3 nF;(9)LCE: 30 nH;(10)Rcc+ee: 0.75 m;(11)td(on): 60 to 100 ns;(12)tr: 55 to 100 ns;(13)td(off): 420 to 500 ns;(14)tf: 50 to 100 ns. If you want to know more information such as the electrical characteristics about the SKM75GB124D, please download the datasheet in www.seekic.com or www.chinaicmart.com.