SpecificationsDescriptionThe SKM400GA123D is designed as one kind of Trench IGBT module, SKM400GA123D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short cir...
SKM400GA123D: SpecificationsDescriptionThe SKM400GA123D is designed as one kind of Trench IGBT module, SKM400GA123D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous ...
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The SKM400GA123D is designed as one kind of Trench IGBT module, SKM400GA123D has some points of features such as (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (12 mm) and creepage distances (20 mm).
Also SKM400GA123D can be used in wide range of applications such as switching (not for linear use). The absolute maximum ratings of the SKM400GA123D can be summarized as:(1)V CES: 1200 V;(2)Ic: 400 (360) A;(3)I CRM: 600 A;(4)V GES: +/- 20 V;(5)Tvj: -40 to +150 ;(6)Visol: 4000 V;(7)I F: 390 (260) A;(8)I FRM: 600 A;(9)I FSM: 2900.
The electrical characteristics of SKM400GA123D can be summarized as:(1)VGE(th): 4.5 to 6.5 V;(2)I CES: 0.1 to 0.3 mA;(3)VCE(TO): 1.4 to 1.6 V;(4)rCE: 3.66 to 4.66 m;(5)VCE(sat): 2.5 to 3 V;(6)Cies: 22 to 30 nF;(7)Coes: 3.3 to 4 nF;(8)Cres: 1.2 to 1.6 nF;(9)LCE: 20 nH;(10)Rcc+ee: 0.18 m. If you want to know more information such as the electrical characteristics about the SKM400GA123D, please download the datasheet in www.seekic.com or www.chinaicmart.com.