SJE1497

The SJE1497 is designed as one kind of PNP silicon power transistor device that can be used in general purpose power amplifier, vertial output applications. This device has two points of features:(1)collector-emitter voltage: 150 V (min.);(2)DC current gain: hFE= 30 (min.) @ Ic= 300 mA.

The absolute maximum ratings of the SJE1497 can be summarized as:(1)collector-emitter voltage: 150 V;(2)collector-base voltage: 200 V;(3)emitter-base voltage: 6.0 V;(4)collector current continuous: 1.5 A;(5)collector current peak: 3.0 A;(6)total power dissipation @ Tc=25:25 W;(7)operating and storage junction temperature range: -55 to +150 . If you want to know more information such as the electrical characteristics about the SJE1497, please download the datasheet in www.seekic.com or www.chinaicmart.com.