MOSFET 75V 4.0A 15.4W 186mohm @ 10V
SIS902DN-T1-GE3: MOSFET 75V 4.0A 15.4W 186mohm @ 10V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 0.186 Ohms | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PowerPAK 1212-8 | Packaging : | Reel |