MOSFET 30V 35A 5.2W 6.0mohm @ 10V
SIS402DN-T1-GE3: MOSFET 30V 35A 5.2W 6.0mohm @ 10V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 19 A | ||
Resistance Drain-Source RDS (on) : | 6 mOhms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PowerPAK 1212 | Packaging : | Reel |