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SIF912EDZ-T1-E3

MOSFET N-CH 30V 2X5 6-POWERPAK

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SeekIC No. : 003430013 Detail

SIF912EDZ-T1-E3: MOSFET N-CH 30V 2X5 6-POWERPAK

SIF912EDZ-T1-E3 Data Sheet

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Part Number:
SIF912EDZ-T1-E3
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Series: TrenchFET® Manufacturer: Vishay Siliconix
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25° C: 7.4A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drain Current (Idss at Vgs=0) : 8 mA to 20 mA Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds: - Power - Max: 1.6W
Mounting Type: Surface Mount Package / Case: PowerPAK? 2x5
Supplier Device Package: PowerPAK? (2x5)    

Description

Series: TrenchFET®
Manufacturer: Vishay Siliconix
FET Feature: Logic Level Gate
Input Capacitance (Ciss) @ Vds: -
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power - Max: 1.6W
Current - Continuous Drain (Id) @ 25° C: 7.4A
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 15nC @ 4.5V
Package / Case: PowerPAK? 2x5
Supplier Device Package: PowerPAK? (2x5)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V


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