SIE802DF-T1-GE3, US $ 1-1.01 , Vishay/Siliconix, SIE802DF-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156131 Detail

SIE802DF-T1-GE3: MOSFET 30V 202A 125W 1.9mohm @ 10V

SIE802DF-T1-GE3 Data Sheet

US $ 1~1.01 / Piece | Get Latest Price

Part Number:: SIE802DF-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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Qty
0~2130
2130~3000
3000~6000

Unit Price
$1.01
$1.01
$1

Processing time
15 Days
15 Days
15 Days

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Upload time: 2024/11/23

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Recent History
What is this?

SIE800DF-T1-E3 evaluate
US $.65 - .7 / Piece

MOSFET 30V 50A 104W 7.2mohm @ 10V
SIE800DF-T1-GE3 evaluate
US $.65 - .7 / Piece

MOSFET 30V 90A 104W 7.2mohm @ 10V
SIE802DF-T1-E3 evaluate
US $1.36 - 2.03 / Piece

MOSFET 30V 60A 125W 1.9mohm @ 10V

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	42.7 A
Resistance Drain-Source RDS (on) :	1.9 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PolarPAK-10	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 1.9 mOhms
Package / Case : PolarPAK-10
Continuous Drain Current : 42.7 A

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SIE802DF-T1-GE3

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