SI9945DY

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.076 Ohms
Continuous Drain Current : 3.3 A


Pinout




Description

The SI9945DY is designed as one kind of dual N-channel enhancement mode MOSFET that is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. And this device can be used in (1)battery switch; (2)load switch; (3)motor controls applications.

Features of the SI9945DY are:(1)High power and current handling capability;(2)Fast switching speed;(3)Low gate charge;(4)3.3 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V.

The absolute maximum ratings of the SI9945DY can be summarized as:(1)drain-source voltage: 60 V;(2)gate-source voltage: +/-20 V;(3)drain current continuous: 3.3 A;(4)drain current pulsed: 10 A;(5)power dissipation for single operation: 2.0 W;(6)operating and storage junction temperature range: -55 to +150. If you want to know more information about the SI9945DY, please download the datasheet in www.seekic.com or www.chinaicmart.com .