MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V
SI8401DB-T1-E3: MOSFET 20V 4.9A 2.77W 65mohm @ 4.5V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 3.6 A | ||
Resistance Drain-Source RDS (on) : | 65 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | Micro Foot-4 | Packaging : | Reel |